Flexible array substrate, manufacturing method thereof and display device

ABSTRACT

A flexible array substrate, a manufacturing method thereof and a display device are provided. The flexible array substrate includes: a first flexible substrate with a first surface; a thin film transistor on the first surface; and a light-shielding layer between the first flexible substrate and the thin film transistor. An orthographic projection of the light-shielding layer on the first flexible substrate covers an orthographic projection of a channel region of the thin film transistor on the first flexible substrate.

This application is a continuation application of U.S. application No.16/337,557 based on PCT/CN2018/110280, which claims the benefit ofChinese patent application No. 201711341653.6 filed on Dec. 14, 2017,which is hereby entirely incorporated by reference as a part of thepresent application.

TECHNICAL FIELD

Embodiments of the present disclosure relate to a flexible arraysubstrate, a manufacturing method thereof and a display device.

BACKGROUND

Flexible active matrix organic light-emitting diode (AMOLED) displayshave advantages of high image quality, short response time to movingimages, low power consumption, wide viewing angle, being ultra-thin andlight and the like, and thus become the best choice for future displaytechnology.

SUMMARY

According to the embodiments of the present disclosure, a flexible arraysubstrate is provided. The flexible array substrate includes: a firstflexible substrate including a first surface; a thin film transistor onthe first surface; a light-shielding layer between the first flexiblesubstrate and the thin film transistor. An orthographic projection ofthe light-shielding layer on the first flexible substrate covers anorthographic projection of a channel region of the thin film transistoron the first flexible substrate.

For example, the orthographic projection of the light-shielding layer onthe first flexible substrate covers an orthographic projection of anactive layer of the thin film transistor on the first flexiblesubstrate.

For example, the flexible array substrate further includes: a bufferlayer between the light-shielding layer and the thin film transistor.

For example, the flexible array substrate further includes: a firstbarrier layer. The light-shielding layer is at at least one of twopositions as follows: a position between the first flexible substrateand the first barrier layer; and a position between the first barrierlayer and the buffer layer.

For example, the flexible array substrate further includes: a firstbarrier layer between the first flexible substrate and the buffer layer;a second flexible substrate on a side of the first barrier layer facingthe thin film transistor; and a second barrier layer on a side of thesecond flexible substrate facing the thin film transistor.

For example, the light-shielding layer is at at least one of a pluralityof positions as follows: a position between the first flexible substrateand the first barrier layer; a position between the first barrier layerand the second flexible substrate; a position between the secondflexible substrate and the second barrier layer; and a position betweenthe second barrier layer and the buffer layer.

For example, the first barrier layer includes: a first barrier sub-layeron a side of the first flexible substrate facing the thin filmtransistor; a second barrier sub-layer on a side of the first barriersub-layer facing the thin film transistor. The light-shielding layer isat at least one of a plurality of positions as follows: a positionbetween the first flexible substrate and the first barrier layer; aposition between the first barrier layer and the second flexiblesubstrate; a position between the second flexible substrate and thesecond barrier layer; a position between the second barrier layer andthe buffer layer; and a position between the first barrier sub-layer andthe second barrier sub-layer.

For example, a material of the second barrier sub-layer is amorphoussilicon.

For example, a material of the light-shielding layer is molybdenum.

According to the embodiments of the present disclosure, a display deviceis provided. The display device includes the flexible array substrate asdescribed above.

According to the embodiments of the present disclosure, a manufacturingmethod of a flexible array substrate is provided. The method includes:forming a rigid substrate including a second surface; forming a firstflexible substrate which is on the second surface; forming a thin filmtransistor which is on a side of the first flexible substrate facingaway from the rigid substrate; forming a light-shielding layer which isbetween the first flexible substrate and the thin film transistor,wherein an orthographic projection of the light-shielding layer on thefirst flexible substrate covers an orthographic projection of a channelregion of the thin film transistor on the first flexible substrate.

For example, the method further includes: forming a buffer layer whichis between the light-shielding layer and the thin film transistor.

For example, the method further includes: forming a first barrier layer.The light-shielding layer is at at least one of two locations asfollows: a position between the first flexible substrate and the firstbarrier layer; and a position between the first barrier layer and thebuffer layer.

For example, the method further includes: forming a first barrier layer;and forming a second flexible substrate and a second barrier layer. Thefirst barrier layer is between the first flexible substrate and thebuffer layer; the second flexible substrate is on a side of the firstbarrier layer facing away from the rigid substrate; the second barrierlayer is on a side of the second flexible substrate facing away from therigid substrate.

For example, the light-shielding layer is at at least one of a pluralityof positions as follows: a position between the first flexible substrateand the first barrier layer; a position between the first barrier layerand the second flexible substrate; a position between the secondflexible substrate and the second barrier layer; and a position betweenthe second barrier layer and the buffer layer.

For example, the first barrier layer includes: a first barrier sub-layerwhich is on a side of the first flexible substrate facing away from therigid substrate; and a second barrier sub-layer which is on a side ofthe first barrier sub-layer facing away from the rigid substrate. Thelight-shielding layer is at at least one of a plurality of positions asfollows: a position between the first flexible substrate and the firstbarrier layer; a position between the first barrier layer and the secondflexible substrate; a position between the second flexible substrate andthe second barrier layer; a position between the second barrier layerand the buffer layer; and a position between the first barrier sub-layerand the second barrier sub-layer.

For example, the method further includes: lift-offing and removing therigid substrate by using laser light.

For example, a plurality of light-shielding layers are provided, and aninterval between adjacent two ones of the plurality of light-shieldinglayers is greater than a wavelength of the laser light.

For example, the interval between the adjacent two ones of the pluralityof light-shielding layers is not less than twice of the wavelength ofthe laser light.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to clearly illustrate the technical solution of the embodimentsof the disclosure, the drawings of the embodiments will be brieflydescribed in the following; it is obvious that the described drawingsare only related to some embodiments of the disclosure and thus are notlimitative of the disclosure.

FIG. 1 shows a display screen mura caused by laser light used in LLOaccording to one technique.

FIG. 2 is a schematic structural view of a flexible array substrateaccording to embodiments of the present disclosure.

FIG. 3 is a schematic structural view of a positional relationshipbetween a light-shielding layer and a channel region according to theembodiments of the present disclosure.

FIG. 4 shows the display screen mura resulting from interference betweenthe LLO laser light and ELA laser light according to one technique.

FIG. 5 is another schematic structural view of the flexible arraysubstrate according to the embodiments of the present disclosure.

FIG. 6 is still another schematic structural view of the flexible arraysubstrate according to the embodiments of the present disclosure.

FIG. 7 is still another schematic structural view of the flexible arraysubstrate according to the embodiments of the present disclosure.

FIG. 8 is a partial structural schematic view of the flexible arraysubstrate shown in FIG. 6 .

FIG. 9 is a partial structural schematic view of the flexible arraysubstrate shown in FIG. 7 .

FIG. 10 is still another schematic structural view of the flexible arraysubstrate according to the embodiments of the present disclosure.

FIG. 11 is another schematic structural view of the flexible arraysubstrate according to the embodiments of the present disclosure.

FIG. 12 is still another schematic structural view of the flexible arraysubstrate according to the embodiments of the present disclosure.

FIG. 13 is still another schematic structural view of the flexible arraysubstrate according to the embodiments of the present disclosure.

FIG. 14 is still another schematic structural view of the flexible arraysubstrate according to the embodiments of the present disclosure.

FIG. 15 is still another schematic structural view of the flexible arraysubstrate according to the embodiments of the present disclosure.

FIG. 16 is still another schematic structural view of the flexible arraysubstrate according to the embodiments of the present disclosure.

FIG. 17 is still another schematic structural view of the flexible arraysubstrate according to the embodiments of the present disclosure.

FIG. 18 is still another schematic structural view of the flexible arraysubstrate according to the embodiments of the present disclosure.

FIG. 19 is a schematic structural diagram of a display device accordingto the embodiments of the present disclosure.

FIG. 20 is a flow diagram of a method for manufacturing the flexiblearray substrate according to the embodiments of the present disclosure.

FIG. 21 is a schematic structural view after completion of a step S400of the method according to the embodiments of the present disclosure.

FIG. 22 is another flow diagram of the method for manufacturing theflexible array substrate according to the embodiments of the presentdisclosure.

FIG. 23 is another flow diagram of the method for manufacturing theflexible array substrate according to the embodiments of the presentdisclosure.

FIG. 24 is still another flow diagram of the method for manufacturingthe flexible array substrate according to the embodiments of the presentdisclosure.

DETAILED DESCRIPTION

In order to make objects, technical details and advantages of theembodiments of the disclosure apparent, the technical solutions of theembodiments will be described in a clearly and fully understandable wayin connection with the drawings related to the embodiments of thedisclosure. Apparently, the described embodiments are just a part butnot all of the embodiments of the disclosure. Based on the describedembodiments herein, those skilled in the art can obtain otherembodiment(s), without any inventive work, which should be within thescope of the disclosure.

Unless otherwise defined, all the technical and scientific terms usedherein have the same meanings as commonly understood by one of ordinaryskill in the art to which the present disclosure belongs. The terms“first,” “second,” etc., which are used in the description and theclaims of the present application for disclosure, are not intended toindicate any sequence, amount or importance, but distinguish variouscomponents. The terms “comprise,” “comprising,” “include,” “including,”etc., are intended to specify that the elements or the objects statedbefore these terms encompass the elements or the objects and equivalentsthereof listed after these terms, but do not preclude the other elementsor objects. The phrases “connect”, “connected”, etc., are not intendedto define a physical connection or mechanical connection, but mayinclude an electrical connection, directly or indirectly. “On,” “under,”“right,” “left” and the like are only used to indicate relative positionrelationship, and when the position of the object which is described ischanged, the relative position relationship may be changed accordingly.

For example, a manufacturing process of a flexible array substrate is asfollows: forming a flexible substrate on a rigid substrate, forming aseries of structures and components such as thin film transistors on theflexible substrate, and then lifting off the rigid substrate by laserlift-off (LLO). The flexible substrate after being lift off from therigid substrate together with the series of structures and componentssuch as the thin film transistors form the flexible array substrate. Inthe above manufacturing process, the rigid substrate has a supportfunction. However, in lifting off the rigid substrate by laser light,the laser light may be irradiated onto channels of the thin filmtransistors, resulting in low gray scale display mura, linear mura,overall mura or the like, with reference to FIG. 1 .

For example, a light-shielding layer is directly disposed on the rigidsubstrate for preventing the laser light used in the LLO from beingirradiated onto the channels, so as to avoid the above various types ofmura and improve the display effect. However, in this case, thefollowing defects may exist: in lifting off the rigid substrate, thehigh-power ultraviolet laser light used in the LLO scans the entirerigid substrate, and a temperature of the rigid substrate becomes veryhigh and reaches thousands of degrees in an instant; the light-shieldinglayer is formed of a metal material and directly provided on the rigidsubstrate, so the rigid substrate softens at the high temperature tocause the light-shielding layer to be contaminated, melted or peeledoff, and finally directly cause the product to be discarded, whichgreatly affects the yield and the output rate of the product.

The inventors have found that in the manufacturing process of theflexible array substrate, by providing the light-shielding layer betweenthe flexible substrate and the thin film transistors, in using the laserlight to scan and lift off the rigid substrate, the entire energy of thelaser light is quickly absorbed by the flexible substrate, chemicalbonds in a material for forming the flexible substrate are broken byabsorbing the energy of the laser light, so that the flexible substrateis separated from the rigid substrate, and molecules that are in thematerial of the flexible substrate material and are directly connectedwith the rigid substrate remain on the rigid substrate, whereby theflexible substrate is not contaminated due to the softening of the rigidsubstrate under the high temperature, thereby improving the productyield and output rate.

According to the embodiments of the present disclosure, a flexible arraysubstrate is provided. For example, referring to FIG. 2 , the flexiblearray substrate includes: a first flexible substrate 20 having a firstsurface 21; a thin film transistor 50 on the first surface 21; and alight-shielding layer 60 between the first flexible substrate 20 and thethin film transistor 50. An orthographic projection of thelight-shielding layer 60 on the first flexible substrate 20 covers anorthographic projection of a channel region 51 of the thin filmtransistor 50 on the first flexible substrate 20. For example, theorthographic projection of the channel region 51 of the thin filmtransistor 50 on the first flexible substrate 20 is entirely within theorthographic projection of the light-shielding layer 60 on the firstflexible substrate 20.

According to the embodiments of the present disclosure, in a directionperpendicular to the first flexible substrate 20, the number of thelight-shielding layer is not limited, one layer of the light-shieldinglayer may be disposed or a plurality of layers of the light-shieldinglayers may be disposed. The plurality of layers of the light-shieldinglayers may be laminated and directly contacted, or at least a part ofthe plurality of layers of the light-shielding layers may be distributedbetween different structural layers of the flexible array substrate.

Therefore, compared with the case where the light-shielding layer isdirectly disposed between the rigid substrate (not shown) and the firstflexible substrate, the embodiments of the disclosure provide thelight-shielding layer between the first flexible substrate and the thinfilm transistor; in using the laser light to scan and lift off the rigidsubstrate, most or even all of the energy of the laser light is quicklyabsorbed by the first flexible substrate, chemical bonds in the materialfor forming the first flexible substrate are broken by absorbing theenergy of the laser light, and molecules which are in the material ofthe first flexible substrate and are directly connected with the rigidsubstrate remain on the rigid substrate, so the first flexible substrateis not contaminated due to the softening of the rigid substrate underthe high temperature, thereby improving the product yield and outputrate, and solving the technical problem that contamination, melting orpeeling off of the light-shielding layer caused by the softening of therigid substrate under the high temperature causes the product to bediscarded.

In addition, the flexible array substrate ensures that the mura causedby the LLO laser light is minimized to reduce the display mura visualdefect caused by the LLO mura and thereby solve the mura problem causedby the LLO laser light, thus the flexible array substrate is suitablefor high resolution and high quality requirements products, and furtherensures that metal ions in the light-shielding layer do not diffuse intothe channel region so as to reduce defect centers and inhibit thegeneration of a leakage current.

According to the embodiments of the present disclosure, in order tobetter block the LLO laser light from being irradiated onto the channelregion to further improve the TFT (thin film transistor)characteristics, the orthographic projection of the light-shieldinglayer on the first flexible substrate covers an orthographic projectionof an active layer of the thin film transistor on the first flexiblesubstrate. For example, the orthographic projection of the active layerof the thin film transistor on the first flexible substrate is entirelywithin the orthographic projection of the light-shielding layer on thefirst flexible substrate. Thereby, the TFT characteristics is improved,and the mura problem caused by the LLO laser light is better solved.

According to the embodiments of the present disclosure, the pattern andsize design of the light-shielding layer are not limited as long as theorthographic projection of the light-shielding layer on the firstflexible substrate covers the orthographic projection of the channelregion of the thin film transistor on the first flexible substrate. Insome embodiments of the present disclosure, referring to FIG. 3 , A inFIG. 3 represents a pattern of the light-shielding layer 60, B in FIG. 3represents the active layer including the channel region 51, and C inFIG. 3 represents a positional relationship (top view) of thelight-shielding layer 60 and the active layer with the channel region;as can be seen from C in FIG. 3 , the light-shielding layer 60 coversthe channel region 51, that is, a size of the channel region is smallerthan a size of the light-shielding layer. For example, in a situationwhere a width W3 and a width W4 of the channel region 51 respectively inX direction and Y direction are 4 µm (microns), a width W1 and a widthW2 of the light-shielding layer 60 respectively in the X direction andthe Y direction are 8 µm, 6 µm or 4 µm. Therefore, the design scheme ofthe light-shielding layer is flexible and the limitation thereof issmall.

For example, a plurality of thin film transistors 50 are on the firstflexible substrate 20, and accordingly, a plurality of light-shieldinglayers 60 are also provided. For example, an interval between adjacentlight-shielding layers 60 is greater than a wavelength of the laserlight used in the LLO, for example, the interval between adjacentlight-shielding layers 60 is not less than twice of the wavelength ofthe laser light. For example, the light-shielding layers 60 are arrangedin an array, the interval between adjacent light-shielding layers 60 isin micron dimension, and the wavelength of the laser light of the LLO is308 nanometers, that is, the interval between adjacent light-shieldinglayers 60 is much larger than the wavelength of the laser light, so thearray of the light-shielding layers 60 does not cause diffraction.

According to the embodiments of the present disclosure, the material andmethod for forming the light-shielding layer 60 are not limited, andthose skilled in the art may flexibly select according to actualconditions. In some embodiments of the present disclosure, the materialfor forming the light-shielding layer is a metal or an alloy, such asmetal molybdenum (Mo). In this way, the service performance is better,and the shielding effect on the LLO laser light is better.

In some embodiments of the present disclosure, the method for formingthe light-shielding layer includes, but is not limited to, chemicalvapor deposition or physical vapor deposition, such as magnetronsputtering.

According to the embodiments of the present disclosure, the material forforming the first flexible substrate is not limited, and those skilledin the art may flexibly select according to actual needs. In someembodiments of the present disclosure, the material for forming thefirst flexible substrate includes, but is not limited to, polyimide,poly-ether-ether-ketone, or polyester. As a result, the material iswidely available, the cost is low, and the use effect is good.

According to the embodiments of the present disclosure, the specificstructure of the TFT is not limited. For example, the TFT is a TFThaving a top gate structure, a TFT having a bottom gate structure, a TFThaving a back channel etch type (BCE) structure, or a TFT having an etchbarrier layer (ESL) structure. Thus, the arrangement of thelight-shielding layer described above is applicable to TFTs of variousstructures.

According to the embodiments of the present disclosure, the material forforming the channel region and the active layer is not limited, andthose skilled in the art may flexibly select according to actual needs.In some embodiment of the present disclosure, various oxides, siliconmaterials, and organic materials may be used as the material for formingthe active layer. For example, the material for forming the active layerincludes, but is not limited to, amorphous indium gallium zinc oxide(a-IGZO), zinc oxynitride (ZnON), indium zinc tin oxide (IZTO),amorphous silicon (a-Si), polysilicon (p-Si), hexathiophene orpolythiophene. As a result, the material is widely available, the costis low, and the use effect is good.

For example, in a situation where the material for forming the channelregion is the polysilicon, an amorphous silicon layer is firstly formedand then the amorphous silicon layer is converted into a polysiliconlayer by excimer laser annealing (ELA). In manufacturing the flexiblearray substrate, the polysilicon layer is obtained by using ELA linearlaser light on a front side and the rigid substrate is lifted off byusing the LLO linear laser light on a back side. The ELA laser light andthe LLO laser light may interact with each other, finally causing theELA laser light and the LLO laser light to interfere with each other,and thus the mura with a periodic and fixed interval occurs. Referringto FIG. 4 , a displayed picture (a side facing a user) has horizontalstripes with a fixed interval (A in FIG. 4 ), the stripes may beslightly tilted upward (B in FIG. 4 ) or slightly tilted downward (C inFIG. 4 ), and the above stripes are visible under low brightness and areapparent under low gray level, which greatly affects the display effectof the display panel. According to the embodiments of the presentdisclosure, the light-shielding layer is located between the firstflexible substrate and the thin film transistor, which not only preventsthe ELA laser light and the LLO laser light from interfering with eachother so as to avoid that the display screen generates the periodic murawith the fixed interval, but also solves the technical problem that thesoftening of the rigid substrate under the high temperature causes thelight-shielding layer to be contaminated, melted or peeled off and thuscauses the product to be discarded.

According to the embodiments of the present disclosure, specificapparatuses for generating the LLO laser light and the ELA laser lightare not limited, and those skilled in the art may flexibly selectaccording to actual needs. In some embodiments of the presentdisclosure, for example, the laser lift-off is performed by using axenon chloride (XeCl) excimer laser (wavelength 308 nm) or a solid statelaser, and the amorphous silicon (a-Si) is annealed by using the xenonchloride (XeCl) excimer laser (wavelength 308 nm) or the solid-statelaser to obtain the polysilicon. Therefore, the use effect is good andthe cost is low.

According to the embodiments of the present disclosure, in order toprevent the metal ions in the light-shielding layer from diffusing tothe channel region 51 to reduce the defect centers and inhibit thegeneration of the leakage current, for example, the flexible arraysubstrate further includes a buffer layer 40. Referring to FIG. 5 , thebuffer layer 40 is located between the light-shielding layer 60 and thethin film transistor 50. Thereby, the metal ions in the light-shieldinglayer 60 are effectively prevented from diffusing to the channel region51, thereby reducing the defect centers and inhibiting the generation ofthe leakage current.

According to the embodiments of the present disclosure, the material andmethod for forming the buffer layer 40 are not limited, and thoseskilled in the art may flexibly select according to actual needs. Insome embodiments of the present disclosure, the material for forming thebuffer layer includes, but is not limited to, silicon oxide, siliconnitride, silicon oxynitride or various organic insulating materials suchas a polysiloxane series material, an acrylic series material, or apolyimide series material. As a result, the material is widelyavailable, the cost is low, and the use effect is good.

In some embodiments of the present disclosure, the method for formingthe buffer layer 40 includes, but is not limited to, chemical vapordeposition (such as PECVD) or physical vapor deposition. The process ismature and easy to be industrialized.

According to the embodiments of the present disclosure, the structure ofthe buffer layer 40 is not limited, and those skilled in the art mayflexibly select according to actual conditions. In some embodiments ofthe present disclosure, the structure of the buffer layer 40 includes,but is not limited to, a single layer structure or a two-layerstructure. In other embodiments of the present disclosure, the bufferlayer has the two-layer structure, such as SiNx/SiO₂, that is, a siliconnitride layer is deposited first, and then a silicon oxide layer isdeposited. Thereby, the metal ions in the light-shielding layer 60 areeffectively prevented from diffusing to the channel region 51, therebyreducing the defect centers and inhibiting the generation of the leakagecurrent.

According to the embodiments of the present disclosure, the thickness ofthe buffer layer 40 is not limited, and those skilled in the art mayflexibly select according to actual needs. In some embodiments of thepresent disclosure, the buffer layer 40 has the two-layer structure.Taking the SiNx/SiO₂ as an example, the silicon nitride layer has athickness of 50 to 150 nm, and the silicon oxide layer has a thicknessof 100 to 350 nm. Thereby, the metal ions in the light-shielding layer60 are effectively prevented from diffusing to the channel region 51 toreduce the defect centers and inhibit the generation of the leakagecurrent, without making the thickness of the entire flexible arraysubstrate thick.

According to the embodiments of the present disclosure, in order tofurther improve the service performance of the flexible array substrate,the flexible array substrate further includes a first barrier layer 30.In the embodiments of the present disclosure, the position at which thefirst barrier layer 30 is disposed is not limited as long as the firstbarrier layer 30 is located between the first flexible substrate 20 andthe buffer layer 40. In some embodiments of the present disclosure,referring to FIG. 6 , the first barrier layer 30 is located between thelight-shielding layer 60 and the buffer layer 40. In other embodimentsof the present disclosure, referring to FIG. 7 , the first barrier layer30 is located between the first flexible substrate 20 and thelight-shielding layer 60. Thereby, the service performance of theflexible array substrate is well improved.

According to the embodiments of the present disclosure, the material andmethod for forming the first barrier layer 30 are not limited, and thoseskilled in the art may flexibly select according to actual needs. Insome embodiments of the present disclosure, the material for forming thefirst barrier layer 30 includes, but is not limited to, silicon oxide,silicon nitride, silicon oxynitride or various organic insulatingmaterials, such as polysiloxane series materials, acrylic seriesmaterials, or a polyimide series material. As a result, the material iswidely available, the cost is low, and the use effect is good.

In some embodiments of the present disclosure, the method for formingthe first barrier layer 30 includes, but is not limited to, chemicalvapor deposition (such as PECVD) or physical vapor deposition. Theprocess is mature and easy to be industrialized.

According to the embodiments of the present disclosure, referring toFIG. 6 to FIG. 9 (FIG. 8 and FIG. 9 are respectively sectional viewscorresponding to one channel region 51 in FIG. 6 and FIG. 7 , that is, aportion in a rectangular frame 1 in FIG. 6 ), the light-emitting layer60 is located between the first flexible substrate 20 and the bufferlayer 40. For example, the light-shielding layer 60 is located at atleast one of the following two positions: a position between the firstflexible substrate 20 and the first barrier layer 30 (FIG. 6 and FIG. 8); and a position between the first barrier layer 30 and the bufferlayer 40 (FIG. 7 and FIG. 9 ). It can be seen that the light-shieldinglayer 60 may be located at the above two positions at the same time, inwhich case the number of the light-shielding layers 60 is two. Comparedwith the case of directly arranging the light-shielding layer 60 on therigid substrate, the embodiments of the present disclosure provide thelight-shielding layer 60 between the first flexible substrate 20 and thebuffer layer 40, in the manufacturing process of the flexible arraysubstrate and in using the LLO laser light to scan the rigid substrate,most or even all of the energy of the laser light is quickly absorbed bythe first flexible substrate 20, the chemical bonds in the material forforming the first flexible substrate are broken by absorbing the energyof the laser light, and the molecules which are in the material of thefirst flexible substrate and are directly connected with the rigidsubstrate remain on the rigid substrate, so the first flexible substrateis not contaminated due to the softening of the rigid substrate underthe high temperature, thereby improving the product yield and outputrate, and at least partially solving the technical problem that thecontamination, melting or peeling off of the light-shielding layercaused by the softening of the rigid substrate under the hightemperature causes the product to be discarded. At the same time, theflexible array substrate ensures that the mura caused by the LLO laserlight is minimized to reduce the display mura visual defect caused bythe LLO mura, the flexible array substrate is suitable for highresolution and high quality requirements products, and ensures that themetal ions in the light-shielding layer 60 do not diffuse into thechannel region 51 to reduce defect centers and inhibit the generation ofthe leakage current.

According to the embodiments of the present disclosure, in order tofurther improve the electrical characteristics of the TFT, for example,the flexible array substrate further includes: a second flexiblesubstrate 70 located on a side of the first barrier layer 30 facing thethin film transistor 50 (i.e., facing the channel region 51); and asecond barrier layer 80 located on a side of the second flexiblesubstrate 70 facing the thin film transistor 50 (i.e., facing thechannel region 51). For example, in the embodiments of the presentdisclosure, referring to FIG. 10 to FIG. 13 , the light-shielding layer60 is located between the first flexible substrate 20 and the bufferlayer 40. Further, for example, the light-shielding layer 60 is locatedat at least one of the following positions: the position between thefirst flexible substrate 20 and the first barrier layer 30 (FIG. 10 ); aposition between the first barrier layer 30 and the second flexiblesubstrate 70 (FIG. 11 ); a position between the second flexiblesubstrate 70 and the second barrier layer 80 (FIG. 12 ); and a positionbetween the second barrier layer 80 and the buffer layer 40 (FIG. 13 ).It can be seen that light-shielding layers 60 may be simultaneouslylocated at two or more of the above plurality of positions, in whichcase the number of the light-shielding layers 60 is two or more.Compared with the case of directly arranging the light-shielding layer60 on the rigid substrate, the embodiments of the present disclosureprovide the light-shielding layer 60 between the first flexiblesubstrate 20 and the buffer layer 40, in using the LLO laser light toscan the rigid substrate, most or even all of the energy of the laserlight is quickly absorbed by the first flexible substrate, the chemicalbonds in the material for forming the first flexible substrate arebroken by absorbing the energy of the laser light, and the moleculeswhich are in the material of the first flexible substrate and aredirectly connected with the rigid substrate remain on the rigidsubstrate, so the first flexible substrate is not contaminated due tothe softening of the rigid substrate under the high temperature, therebyimproving the product yield and output rate, namely solving thetechnical problem that the contamination, melting or peeling off of thelight-shielding layer caused by the softening of the rigid substrateunder the high temperature causes the product to be discarded. At thesame time, the flexible array substrate ensures that the mura caused bythe LLO laser light is minimized to reduce the display mura visualdefect caused by the LLO mura, the flexible array substrate is suitablefor high resolution and high quality requirements products, and ensuresthat the metal ions in the light-shielding layer 60 do not diffuse intothe channel region 51 to reduce defect centers and inhibit thegeneration of the leakage current.

According to the embodiments of the present disclosure, requirements onthe material for forming the second barrier layer 80 is consistent withrequirements on the material for forming the first barrier layer 30, anddetails are not described herein again.

According to the embodiments of the present disclosure, requirements onthe material for forming the second flexible substrate 70 is consistentwith requirements on the material for forming the first flexiblesubstrate 20, and details are not described herein again.

According to the embodiments of the present disclosure, although onlythe case of the two layers of the flexible substrates is describedabove, those skilled in the art will readily understand that withreference to the above structure, structures of stacking more layers ofthe flexible substrates or stacking more layers of the barrier layers orthe like and correspondingly providing the light-shielding layer arewithin the scope of the disclosed embodiments.

According to the embodiments of the present disclosure, in order toincrease the adhesion force between the first barrier layer 30 and thesecond flexible substrate 70 and improve the service performance of theflexible array substrate, referring to FIG. 14 to FIG. 18 , the firstbarrier layer 30 includes: a first barrier sub-layer 31 located on aside of the first flexible substrate 20 facing the thin film transistor50 (i.e., facing the channel region 51); and a second barrier sub-layer32 located on a side of the first barrier sub-layer 31 facing the thinfilm transistor 50 (i.e., facing the channel region 51). For example,the light-shielding layer 60 is located at at least one of a pluralityof positions in the following: the position between the first flexiblesubstrate 20 and the first barrier layer 30 (FIG. 14 ); the positionbetween the first barrier layer 30 and the second flexible substrate 70(FIG. 15 ); the position between the second flexible substrate 70 andthe second barrier layer 80 (FIG. 16 ); the position between the secondbarrier layer 80 and the buffer layer 40 (FIG. 17 ); and a positionbetween the first barrier sub-layer 31 and the second barrier sub-layer32 (FIG. 18 ). It can be seen that light-shielding layers 60 may besimultaneously located at two or more of the above plurality ofpositions, in which case the number of the light-shielding layers 60 istwo or more. According to the embodiments of the present disclosure, theservice performance of the flexible array substrate is improved.Compared with directly arranging the light-shielding layer on the rigidsubstrate, the embodiments of the present disclosure provide thelight-shielding layer between the first flexible substrate and thebuffer layer; in using the LLO laser light to scan the rigid substrate,most or even all of the energy of the laser light is quickly absorbed bythe first flexible substrate, the chemical bonds in the material forforming the first flexible substrate are broken by absorbing the energyof the laser light, and the molecules which are in the material of thefirst flexible substrate and are directly connected with the rigidsubstrate remain on the rigid substrate, so the first flexible substrateis not contaminated due to the softening of the rigid substrate underthe high temperature, thereby improving the product yield and outputrate, namely solving the technical problem that the contamination,melting or peeling off of the light-shielding layer caused by thesoftening of the rigid substrate under the high temperature causes theproduct to be discarded. At the same time, the flexible array substrateensures that the mura caused by the LLO laser light is minimized toreduce the display mura visual defect caused by the LLO mura, theflexible array substrate is suitable for high resolution and highquality requirements products, and ensures that the metal ions in thelight-shielding layer do not diffuse into the channel region to reducedefect centers and inhibit the generation of the leakage current.

According to the embodiments of the present disclosure, requirements onthe material for forming the first barrier sub-layer 31 is consistentwith requirements on the material for forming the first barrier layer30, and details are not described herein again.

According to the embodiments of the present disclosure, the material forforming the second barrier sub-layer 32 is not limited, and thoseskilled in the art may flexibly select according to actual needs. In theembodiments of the present disclosure, the material for forming thesecond barrier sub-layer 32 is amorphous silicon. Thereby, the adhesioneffect is good.

According to the embodiments of the present disclosure, in a situationwhere a flexible display screen manufactured by using the flexible arraysubstrate described above is integrated with a back-end application,such as various mobile phone later-period integrated sensors, receivers,divergers, etc., the light-shielding layer also is used to blockultraviolet light, infrared light or visible light or the like from alight source, so as to prevent the influence of the above light on theflexible display.

According to the embodiments of the present disclosure, a display deviceis provided. According to the embodiments of the present disclosure, thedisplay device includes the flexible array substrate described above.Thereby, the display device has uniform display, uniform brightness, lowvisual defects and high quality display. Those skilled in the art canunderstand that the display device has all the features and advantagesof the flexible array substrate described above, and details are notdescribed herein again.

According to some embodiments of the present disclosure, referring toFIG. 19 , in addition to the flexible array substrate described above,the display device further includes a planarization layer 120 on a sideof the thin film transistor facing away from the first flexiblesubstrate 20, a light-emitter component 90 on a side of theplanarization layer 120 facing away from the first flexible substrate20, an encapsulation layer 100 on a side of the light-emitter component90 facing away from the first flexible substrate 20, and a topprotective film 110 on a side of the thin film encapsulation layer 100facing away from the first flexible substrate 20. Thereby, the displayfunction of the display device is achieved.

According to some embodiments of the present disclosure, the displaydevice may be a flexible display device that implements a curved orbendable display; or the display device may be a non-flexible displaydevice that uses the flexible array substrate described above toincrease the service life of the product in the case that the productfalls off or the like.

According to the embodiments of the present disclosure, thelight-emitter component 90 is, for example, an organic light-emittingdiode (OLED), a quantum dot light-emitting diode (QLED), or the like.

According to the embodiments of the present disclosure, the specifictype of the display device is not particularly limited, and the displaydevice may be any device or apparatus having a display function in theart, such as, but not limited to, a mobile phone, a tablet computer, acomputer display, a game machine, a television, a display screen, awearable device, or any other living appliance or household appliancewith the display function.

Of course, those skilled in the art can understand that the displaydevice described in the embodiments of the present disclosure mayfurther include necessary structures and components of a conventionaldisplay device in addition to the flexible array substrate describedabove. Taking the mobile phone as an example, in addition to theflexible array substrate of the embodiments of the present disclosure,the display device may further include structures and componentsincluded by the conventional mobile phone such as a touch screen, ahousing, a CPU, a camera module, a fingerprint recognition module, asound processing system and the like, which are not described here.

According to the embodiments of the present disclosure, a manufacturingmethod of the flexible array substrate is provided. According to theembodiments of the present disclosure, referring to FIG. 20 and FIG. 21, the method includes the following steps.

S100: forming the rigid substrate which includes a second surface.

For example, the rigid substrate 10 is formed and the rigid substratehas the second surface 11. According to the embodiments of the presentdisclosure, in order to improve the product yield, the rigid substrate10 needs to be pre-cleaned, and a cleaning method is not limited as longas the cleanliness of the rigid substrate 10 after cleaning reaches therequirements.

According to the embodiments of the present disclosure, the specifictype of the rigid substrate 10 is not limited, and those skilled in theart may flexibly select according to actual conditions. In someembodiments of the present disclosure, the type of the rigid substrate10 include, but is not limited to, glass substrate. As a result, thesource material is wide, the cost is low, and the use effect is good.

S200: forming the first flexible substrate which is located on thesecond surface.

According to the embodiments of the present disclosure, the method forforming the first flexible substrate 20 is not limited, and thoseskilled in the art may flexibly select according to actual conditions.In the embodiments of the present disclosure, the method for forming thefirst flexible substrate 20 includes, but is not limited to, chemicalvapor deposition or physical vapor deposition. Thus, the method issimple and mature, and is easy to be industrialized.

According to the embodiments of the present disclosure, in order tofacilitate the forming of subsequent film layers, the surface 21 of thefirst flexible substrate 20 needs to be cleaned after the first flexiblesubstrate 20 is formed. The cleaning method is not limited as long asthe cleaning method makes the first flexible substrate 20 clean and doesnot cause damage to the first flexible substrate 20, and those skilledin the art may flexibly choose according to actual conditions.

S300: forming the thin film transistor which is located on the side ofthe first flexible substrate facing away from the rigid substrate.

According to the embodiments of the present disclosure, those skilled inthe art may select a forming method according to a specific structure ofthe thin film transistor 50, and a specific method for forming the TFTis not limited herein.

S400: forming the light-shielding layer which is located between thefirst flexible substrate and the thin film transistor, in which theorthographic projection of the light-shielding layer on the firstflexible substrate covers the orthographic projection of the channelregion of the thin film transistor on the first flexible substrate.

According to the embodiments of the present disclosure, the method forforming the light-shielding layer 60 is not limited, and those skilledin the art may flexibly select according to actual needs. In theembodiments of the present disclosure, the method for forming thelight-shielding layer 60 includes, but is not limited to, chemical vapordeposition, physical vapor deposition, coating or printing, or the like.Thus, the method is simple and mature and is easy to be industrialized.In some embodiments of the present disclosure, the method for formingthe light-shielding layer 60 includes: forming a light-shielding filmcovering the whole first flexible substrate 20, and etching thelight-shielding film according to a pattern requirement for thelight-shielding layer 60 to be formed, for example, a pattern of thechannel region 51, to obtain the light-shielding layer 60.

According to the embodiments of the present disclosure, themanufacturing method for the flexible array substrate is simple andquick, is mature in process, and is easy to be industrialized. Comparedwith the case of directly arranging the light-shielding layer on therigid substrate, the embodiments of the present disclosure provide thelight-shielding layer between the first flexible substrate and thebuffer layer; in using the LLO laser light to scan the rigid substrate,most or even all of the energy of the laser light is quickly absorbed bythe first flexible substrate, the chemical bonds in the material forforming the first flexible substrate are broken by absorbing the energyof the laser light, and the molecules which are in the material of thefirst flexible substrate and are directly connected with the rigidsubstrate remain on the rigid substrate, so the first flexible substrateis not contaminated due to the softening of the rigid substrate underthe high temperature, thereby improving the product yield and outputrate, and at least partially solving the technical problem that thecontamination, melting or peeling off of the light-shielding layercaused by the softening of the rigid substrate under the hightemperature causes the product to be discarded. At the same time, theflexible array substrate ensures that the mura caused by the LLO laserlight is minimized to reduce the display mura visual defect caused bythe LLO mura, the flexible array substrate is suitable for highresolution and high quality requirements products, and ensures that themetal ions in the light-shielding layer do not diffuse into the channelregion to reduce the defect centers and inhibit the generation of theleakage current.

According to the embodiments of the present disclosure, referring toFIG. 22 , for example, the method further includes a step S500 offorming the buffer layer between the light-shielding layer and the thinfilm transistor, that is, the thin film transistor is located on theside of the buffer layer facing away from the first flexible substrate.

According to the embodiments of the present disclosure, for example, theabove method further includes a step S600 of forming the first barrierlayer. For example, the first barrier layer is located between thelight-shielding layer and the buffer layer, that is, on the side of thelight-shielding layer facing away from the first flexible substrate,referring to FIG. 23 . For example, the first barrier layer is locatedbetween the first flexible substrate and the light-shielding layer, thatis, on the side of the first flexible substrate facing away from therigid substrate, with reference to FIG. 24 .

According to the embodiments of the present disclosure, in a case wherethe first barrier layer is formed, the light-shielding layer is locatedat at least one of the following two positions: the position between thefirst flexible substrate and the first barrier layer; and the positionbetween the first barrier layer and the buffer layer. It can be seenthat light-shielding layers may be located at the above two positions atthe same time, in which case the number of the light-shielding layers istwo.

According to the embodiments of the present disclosure, the method forforming the buffer layer and the first barrier layer is not limited, andthose skilled in the art may flexibly select according to actual needs.In the embodiments of the present disclosure, the method for forming thebuffer layer and the first barrier layer includes, but is not limitedto, chemical vapor deposition, or physical vapor deposition. Thus, themethod is simple and mature, and is easy to be industrialized.

According to the embodiments of the present disclosure, the above stepsS100, S200, S300, S400, S500, and S600 are not limitative to the processsequence of the manufacturing process, and those skilled in the art mayselect the sequence of steps of the manufacturing process according toactual conditions. For example, according to the above description, forexample, the light-shielding layer is located between the first flexiblesubstrate and the first barrier layer, that is, the light-shieldinglayer is located on the first flexible substrate, and the first barrierlayer is located on the side of the light-shielding layer facing awayfrom the first flexible substrate, in which case, the schematic flowchart is referred to FIG. 23 , and the structural schematic views arereferred to FIG. 6 and FIG. 8 ; and/or the light-shielding layer islocated between the first barrier layer and the buffer layer, that is,the light-shielding layer is located on the side of the first barrierlayer facing away from the first flexible substrate, and the bufferlayer is located on the side of the light-shielding layer facing awayfrom the first flexible substrate, in which case, the schematic flowchart is referred to FIG. 24 , and the structural schematic views arereferred to FIG. 7 and FIG. 9 .

According to the embodiments of the present disclosure, in order tobetter block the LLO laser light from being irradiated to the channeland further improve the TFT characteristics, the orthographic projectionof the light-shielding layer on the first flexible substrate covers theorthographic projection of the active layer of the thin film transistoron the first flexible substrate. Thereby, the TFT characteristics areimproved, and the mura problem caused by the LLO is better solved.

According to the embodiments of the present disclosure, in order tofurther improve the electrical characteristics of the TFT, for example,the above method further includes the step of forming the secondflexible substrate 70 and the second barrier layer 80 (see FIG. 10 toFIG. 13 ), in which the second flexible substrate 70 is located on theside of the first barrier layer 30 facing away from the first flexiblesubstrate 20; the second barrier layer 80 is located on the side of thesecond flexible substrate 70 facing away from the first flexiblesubstrate 20. In the embodiments of the present disclosure, thelight-shielding layer 60 is located between the first flexible substrate20 and the buffer layer 40. For example, referring to FIG. 10 to FIG. 13, the light-shielding layer 60 is located at at least one of a pluralityof positions in the following: the position between the first flexiblesubstrate 20 and the first barrier layer 30 (FIG. 10 ); the positionbetween the first barrier layer 30 and the second flexible substrate 70(FIG. 11 ); the position between the second flexible substrate 70 andthe second barrier layer 80 (FIG. 12 ); and the position between thesecond barrier layer 80 and the buffer layer 40 (FIG. 13 ). It can beseen that light-shielding layers 60 may be simultaneously located at twoor more of the above plurality of positions, in which case the number ofthe light-shielding layers 60 is two or more. Compared with the case ofdirectly arranging the light-shielding layer on the rigid substrate, theembodiments of the present disclosure provide the light-shielding layerbetween the first flexible substrate and the buffer layer; in using theLLO laser light to scan the rigid substrate, most or even all of theenergy of the laser light is quickly absorbed by the first flexiblesubstrate, the chemical bonds in the material for forming the firstflexible substrate are broken by absorbing the energy of the laserlight, and the molecules which are in the material of the first flexiblesubstrate and are directly connected with the rigid substrate remain onthe rigid substrate, so the first flexible substrate is not contaminateddue to the softening of the rigid substrate under the high temperature,thereby improving the product yield and output rate, namely solving thetechnical problem that the contamination, melting or peeling off of thelight-shielding layer caused by the softening of the rigid substrateunder the high temperature causes the product to be discarded. At thesame time, the flexible array substrate ensures that the mura caused bythe LLO laser light is minimized to reduce the display mura visualdefect caused by the LLO mura, the flexible array substrate is suitablefor high resolution and high quality requirements products, and ensuresthat the metal ions in the light-shielding layer do not diffuse into thechannel region to reduce the defect centers and inhibit the generationof the leakage current

According to the embodiments of the present disclosure, the requirementson the method for forming the second flexible substrate is consistentwith the requirements on the method for forming the first flexiblesubstrate described above, and the requirements on the method forforming the second barrier layer is consistent with the requirements onthe method for forming the first barrier layer described above, whichare not described here.

According to the embodiments of the present disclosure, in order toincrease the adhesion force between the first barrier layer and thesecond flexible substrate and improve the service performance of theflexible array substrate, referring to FIG. 14 to FIG. 18 , the firstbarrier layer 30 includes: the first barrier sub-layer 31 which islocated on the side of the first flexible substrate 20 facing away fromthe rigid substrate 10; and the second barrier sub-layer 32 which islocated on the side of the first barrier sub-layer 31 facing away fromthe rigid substrate 10. In this case, the light-shielding layer 60 islocated at at least one of the following positions: the position betweenthe first flexible substrate 20 and the first barrier layer 30 (FIG. 14); the position between the first barrier layer 30 and the secondflexible substrate 70 (FIG. 15 ); the position between the secondflexible substrate 70 and the second barrier layer 80 (FIG. 16 ); theposition between the second barrier layer 80 and the buffer layer 40(FIG. 17 ); and the position between the first barrier sub-layer 31 andthe second barrier sub-layer 32 (FIG. 18 ). It can be seen thatlight-shielding layers 60 may be simultaneously located at two or moreof the above plurality of positions, in which case the number of thelight-shielding layers 60 is two or more. According to the embodimentsof the present disclosure, the service performance of the flexible arraysubstrate is improved. Compared with the case of directly arranging thelight-shielding layer on the rigid substrate, the embodiments of thepresent disclosure provide the light-shielding layer between the firstflexible substrate and the buffer layer; in using the LLO laser light toscan the rigid substrate, most or even all of the energy of the laserlight is quickly absorbed by the first flexible substrate, the chemicalbonds in the material for forming the first flexible substrate arebroken by absorbing the energy of the laser light, and the moleculeswhich are in the material of the first flexible substrate and aredirectly connected with the rigid substrate remain on the rigidsubstrate, so the first flexible substrate is not contaminated due tothe softening of the rigid substrate under the high temperature, therebyimproving the product yield and output rate, and at least partiallysolving the technical problem that the contamination, melting or peelingoff of the light-shielding layer caused by the softening of the rigidsubstrate under the high temperature causes the product to be discarded.At the same time, the flexible array substrate ensures that the muracaused by the LLO laser light is minimized to reduce the display muravisual defect caused by the LLO mura, the flexible array is suitable forhigh resolution and high quality requirements products, and ensures thatthe metal ions in the light-shielding layer do not diffuse into thechannel region to reduce the defect centers and inhibit the generationof the leakage current.

According to the embodiments of the present disclosure, the above methodmay be used to prepare the flexible array substrate described above, andthe material and method for forming the rigid substrate, the firstflexible substrate, the first barrier layer, the buffer layer, thelight-shielding layer, the channel region, the second barrier layer, thesecond flexible substrate, the first barrier sub-layer or the secondbarrier sub-layer are the same as those described above, and are notfurther described herein.

For example, according to the embodiments of the present disclosure,after the thin film transistor is formed, for example, the above methodfurther includes: removing the rigid substrate by using the LLO.

According to the embodiments of the present disclosure, in the situationwhere the material for forming the channel region is polysilicon, thespecific process for forming the polysilicon layer is not limited, andthose skilled in the art may flexibly select according to actual needs.In some embodiments of the present disclosure, the process of formingthe polysilicon layer involves: depositing an amorphous silicon layerhaving a thickness of 30 to 60 nm by a plasma enhanced chemical vapordeposition (PECVD) method, then heating the amorphous silicon layer at atemperature of 400° C. to 450° C. for 0.5 to 3 hours, and finallyperforming an excimer laser annealing (ELA) process to obtain thepolysilicon layer. Thus, the method is mature and simple, easy tooperate, and easy to be industrialized.

According to the embodiments of the present disclosure, after thepolysilicon layer is formed, the subsequent processes of manufacturingthe array substrate are performed by using conventional techniques andprocesses. In the embodiments of the present disclosure, after thepolysilicon layer is formed, the steps are subsequently performed:forming an active pattern, performing a channel ion implantationadjustment (Vth doping), performing a hydrofluoric acid cleaning (HFclean), forming an insulating layer (GI), performing source electrodeand drain electrode doping (SD doping), forming a planarization layer(ILD, CNT), performing hydrogenation, forming the source electrode andthe drain electrode (SD), forming an organic planarization layer (PLN),forming an anode (ITO), forming an organic cover layer (PDL), forming anisolation layer (PS), and so on.

According to the embodiments of the present disclosure, for example,after forming the encapsulation layer, the above method formanufacturing the flexible array substrate further includes the step ofremoving the rigid substrate by using the laser lift-off method, so asto finally completing the manufacture of the entire flexible arraysubstrate. According to the above description, in removing the rigidsubstrate by the laser lift-off method, because the light-shieldinglayer is located between the first flexible substrate and the bufferlayer, most or even all of the energy of the laser light is quicklyabsorbed by the first flexible substrate, the chemical bonds in thematerial for forming the first flexible substrate are broken byabsorbing the energy of the laser light, and the molecules which are inthe material of the first flexible substrate and are directly connectedwith the rigid substrate remain on the rigid substrate, so the firstflexible substrate is not contaminated due to the softening of the rigidsubstrate under the high temperature, thereby improving the productyield and output rate, namely solving the technical problem that thecontamination, melting or peeling off of the light-shielding layercaused by the softening of the rigid substrate under the hightemperature causes the product to be discarded. At the same time, theflexible array substrate ensures that the mura caused by the LLO laserlight is minimized to reduce the display mura visual defect caused bythe LLO mura.

What are described above is related to the illustrative embodiments ofthe disclosure only and not limitative to the scope of the disclosure;the scopes of the disclosure are defined by the accompanying claims.

What is claimed is:
 1. A flexible array substrate, comprising: a firstflexible substrate; a first barrier layer on the first flexiblesubstrate; a second flexible substrate on the first barrier layer; asecond barrier layer; a light-shielding layer with a plurality ofportions; and a buffer layer; wherein the second barrier layer isprovided on a side of the second flexible substrate near the bufferlayer, the light-shielding layer is provided at one of positionsincluding a position between the second barrier layer and the secondflexible substrate, and a position between the second barrier layer andthe buffer layer; and a distance between adjacent portions of thelight-shielding layer is greater than a wavelength of a laser light usedin a laser light lift-off process.
 2. The flexible array substrateaccording to claim 1, wherein the first barrier comprises a firstbarrier sub-layer and a second barrier sub-layer.
 3. The flexible arraysubstrate according to claim 2, wherein the first barrier sub-layer isprovided on a side of the first flexible substrate facing the secondflexible substrate; and the second barrier sub-layer is provided on aside of the first barrier sub-layer facing the second flexiblesubstrate.
 4. The flexible array substrate according to claim 2, whereina material of the second barrier sub-layer is amorphous silicon.
 5. Theflexible array substrate according to claim 1, wherein a material of thelight-shielding layer is molybdenum.
 6. The flexible array substrateaccording to claim 1, wherein the distance between the adjacent portionsof the light-shielding layer is not less than twice of the wavelength ofthe laser light.
 7. A display device, comprising a flexible arraysubstrate, wherein the flexible array substrate comprises: a firstflexible substrate; a first barrier layer on the first flexiblesubstrate; a second flexible substrate on the first barrier layer; asecond barrier layer; a light-shielding layer; and a buffer layer;wherein the second barrier layer is provided on a side of the secondflexible substrate near the buffer layer, the light-shielding layer isprovided at one of positions including a position between the secondbarrier layer and the second flexible substrate, and a position betweenthe second barrier layer and the buffer layer; and a distance betweenadjacent portions of the light-shielding layer is greater than awavelength of a laser light used in a laser light lift-off process. 8.The display device according to claim 7, wherein the first barriercomprises a first barrier sub-layer and a second barrier sub-layer. 9.The display device according to claim 8, wherein the first barriersub-layer is provided on a side of the first flexible substrate facingthe second flexible substrate; and the second barrier sub-layer isprovided on a side of the first barrier sub-layer facing the secondflexible substrate.
 10. The display device according to claim 8, whereina material of the second barrier sub-layer is amorphous silicon.
 11. Thedisplay device according to claim 7, wherein a material of thelight-shielding layer is molybdenum.
 12. The display device according toclaim 7, further comprising a plurality of thin film transistor on thebuffer layer, wherein each thin film transistor comprises a channelregion facing the buffer layer.
 13. The display device according toclaim 7, wherein the distance between the adjacent portions of thelight-shielding layer is not less than twice of the wavelength of thelaser light.
 14. A manufacturing method of a flexible array substrate,comprising: providing a rigid substrate; forming a first flexiblesubstrate on one side of the rigid substrate; forming a first barrierlayer on the first flexible substrate; forming a second flexiblesubstrate on the first barrier layer; forming a second barrier layer;forming a light-shielding layer with a plurality of portions ; andforming a buffer layer; wherein the second barrier layer is formed on aside of the second flexible substrate near the buffer layer, thelight-shielding layer is formed at one of positions including a positionbetween the second barrier layer and the second flexible substrate, anda position between the second barrier layer and the buffer layer; and adistance between adjacent portions of the light-shielding layer isgreater than a wavelength of a laser light used in a laser lightlift-off process.
 15. The method according to claim 14, wherein thefirst barrier comprises a first barrier sub-layer and a second barriersub-layer.
 16. The method according to claim 15, wherein the firstbarrier sub-layer is formed on a side of the first flexible substratefacing the second flexible substrate; and the second barrier sub-layeris formed on a side of the first barrier sub-layer facing the secondflexible substrate.
 17. The method according to claim 15, wherein thesecond barrier sub-layer is made of amorphous silicon.
 18. The methodaccording to claim 14, wherein the light-shielding layer is made ofmolybdenum.
 19. The method according to claim 18, further comprisinglift-offing and removing the rigid substrate by using the laser light.20. The method according to claim 14, wherein the distance between theadjacent portions of the light-shielding layer is not less than twice ofthe wavelength of the laser light.